CS48N75 - N-Channel Trench Process Power MOSFET

Thinki Semiconductor

General Description

The CS48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

VDS=70V；ID=68A@ VGS=10V； RDS(ON).

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CS48N75 n-channel trench process power mosfet by Thinki Semiconductor - Datasheet Preview

Datasheet Details

Part number	CS48N75
Manufacturer	Thinki Semiconductor
File Size	0.97 MB
Description	N-Channel Trench Process Power MOSFET
Datasheet	CS48N75 Datasheet

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CS48N75 ® Pb Free Plating Product CS48N75 Pb 70V,68A N-Channel Trench Process Power MOSFET General Description The CS48N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=68A@ VGS=10V； RDS(ON)<8.4mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS48N75 (TO-220 HeatSink) G DS Schematic Diagram VDS = 70 V ID = 68A RDS(ON) = 7mΩ Table 1.