Datasheet4U.com

DK48N88 Datasheet PDF

Thinki Semiconductor DK48N88

The DK48N88 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Part No. DK48N88
Datasheet DK48N88 Download
Manufacturer
Thinki Semiconductor
Description N-Channel Trench Process Power MOSFET
Buy Stock & Price
DK48N88 datasheet page 1 preview

GENERAL DESCRIPTION

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

FEATURES

● VDS=70V;ID=88A@ VGS=10V; RDS(ON)<5.2mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● 48V E-Bike Controller

APPLICATIONS

● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply DK48N88 (TO-220 HeatSink) G DS Schematic Diagram VDSS = 70V IDSS = 88A RDS(ON) = 4.8mΩ Table 1.

ABSOLUTE MAXIMUM RATINGS

(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derating Factor EAS Single Pulse Avalanche Energy (Note 2) TJ,TSTG Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS...
DK48N88 page 2 preview