DSEI60-12A datasheet by Thinki Semiconductor.
| Part number | DSEI60-12A |
|---|---|
| Datasheet | DSEI60-12A-ThinkiSemiconductor.pdf |
| File Size | 844.13 KB |
| Manufacturer | Thinki Semiconductor |
| Description | SwitchMode Single Fast Recovery Epitaxial Diode |
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DSEI60-12A using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR V RRM I F(AV) I F(RMS) I FSM PD TJ T STG Torque Maximum D.C. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C -- 7.5 -- A trr Reverse Recovery Time VR=600V, IF=60A -- 320 -- ns IRRM Max.
View DSEI60-12A datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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DSEI60-12A | Fast Recovery Epitaxial Diode | IXYS |
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DSEI60-12A | Ultrafast Rectifier | INCHANGE |
View all Thinki Semiconductor datasheets
| Part Number | Description |
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