Thinki Semiconductor EM518
High Voltage Silicon Diode
FEATURES
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● Low leakage Low forward voltage drop High current capability .205(5.2) .160(4.1) 1.0(25.4)MIN.
● Low cost .034(.86) .028(.71)
MECHANICAL DATA
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● Case: Molded plastic, DO-41 Mounting Position: Any Terminals: Axial leads, solderable per MIL-STD-202 .107(2.7) 1.0(25.4)MIN. .080(2.0)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25oC) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current , .375”(9.5mm) lead length TA =75℃ Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at IF = 1.0A DC TJ = 25oC Maximum leakage current at TA = 25 OC at rated DC blocking voltage at TA = 100OC Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Operating and storage temperature range VRRM VRMS VDC IFAV EM 513 1600 1120 1600 EM 516 1800 1260 1800 1 30 EM 518 2000 1400 2000 Units V V V A IFSM A VF IR CJ RthA TJ ,TS 1.1 5 500 15 50 -55 to +150 V µA µA pF ℃/W ℃ Note : 1.