F55NF06 Description
12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.
F55NF06 Key Features
- RDS(ON) = 23mȍ@VGS = 10 V
- Ultra low gate charge ( typical 30 nC )
- Low reverse transfer capacitance ( CRSS = typical 80 pF )
- Fast switching capability
- 100% avalanche energy specified
- Improved dv/dt capability
- SYMBOL
- APPLICATION Auotmobile Convert System Networking DC-DC Power System Power Supply etc