FQP65N06
FQP65N06 is N-Channel Power MOSFET manufactured by Thinki Semiconductor.
®
Pb
Pb Free Plating Product
65A,60V Heatsink Planar N-Channel Power MOSFET
Features
- 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
- Low gate charge ( typical 48 nC)
- Low Crss ( typical 100 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
- ◀▲
- -
{ 3. Source
BVDSS = 60V RDS(ON) = 0.016 ohm ID = 65A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics....
