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IRF630PBF - N-Channel Type Power MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.4 ohm ID = 9A General.

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Datasheet Details

Part number IRF630PBF
Manufacturer Thinki Semiconductor
File Size 0.99 MB
Description N-Channel Type Power MOSFET
Datasheet download datasheet IRF630PBF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested 1.Gate 2.Drain 3.Source BVDSS = 200V RDS(ON) = 0.4 ohm ID = 9A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.