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IRF730PBF
®
Pb Free Plating Product
Features
■ RDS(on) (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested
IRF730PBF
Pb
6.5A,400V Heatsink N-Channel Type Power MOSFET
1.Gate
2.Drain 3.Source
BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.