IRF730PBF
Features
- RDS(on) (Max 1 Ω )@VGS=10V
- Gate Charge (Typical 32n C)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
Pb
6.5A,400V Heatsink N-Channel Type Power MOSFET
1.Gate
2.Drain 3.Source
BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol
VDSS
IDM VGS EAS EAR dv/dt
TSTG, TJ TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC...
