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IRF730PBF - N-Channel Type Power MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 1 Ω )@VGS=10V.
  • Gate Charge (Typical 32nC).
  • Improved dv/dt Capability.
  • High ruggedness.
  • 100% Avalanche Tested IRF730PBF Pb 6.5A,400V Heatsink N-Channel Type Power MOSFET 1.Gate 2.Drain 3.Source BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A General.

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Datasheet Details

Part number IRF730PBF
Manufacturer Thinki Semiconductor
File Size 1.13 MB
Description N-Channel Type Power MOSFET
Datasheet download datasheet IRF730PBF Datasheet

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IRF730PBF ® Pb Free Plating Product Features ■ RDS(on) (Max 1 Ω )@VGS=10V ■ Gate Charge (Typical 32nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested IRF730PBF Pb 6.5A,400V Heatsink N-Channel Type Power MOSFET 1.Gate 2.Drain 3.Source BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.