Thinki Semiconductor IRF730PBF
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.IRF730PBF Specifications
- Package : TO-220AB
- Mount Type : Through Hole
- Current Rating : 5.5A
- Breakdown Voltage : 400V
- Threshold Voltage : 4V
- RDS(on) Max : 1Ω
- Input Capacitance : 700pF
- Terminals : 3
- Channels : 1
- Rise Time : 15ns
- Fall Time : 14ns
- Max Power Dissipation : 74W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF730PBF |
|---|---|
| Datasheet | IRF730PBF Download |
| Manufacturer |  Thinki Semiconductor |
| Description | N-Channel Type Power MOSFET |
| Buy | Stock & Price |
FEATURES
● RDS(on) (Max 1 Ω )@VGS=10V● Gate Charge (Typical 32nC)
● Improved dv/dt Capability
● High ruggedness
● 100% Avalanche Tested IRF730PBF Pb 6.5A,400V Heatsink N-Channel Type Power MOSFET 1.Gate 2.Drain 3.Source BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A
GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. TO-220CABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance,...
