IRFP460PBF
Features
- RDS(on) (Max 0.24 Ω )@VGS=10V
- Gate Charge (Typical 130n C)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
1. Gate {
{ 2. Drain
- ◀▲
- -
{ 3. Source
BVDSS = 500V RDS(ON) = 0.24 ohm ID = 20A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3PB pkg is well suited for adaptor power unit and small power inverter application.
TO-3PB
3 2 1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note...
