DESCRIPTION
Product specification MJE13005 series Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. ABSOLUTE MAXIMUM RATINGS
( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature 1. B 2. C 3. E l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 700 400 9 4.0 2.0 70 150 -55~150 Unit V V V A A W o o C Storage Temperature C Unit:mm ELECTRICAL CHARACTERISTICS
( Ta = 25℃ ) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn Off Time Symbol Test Conditions VCE=700V, IE=0 VEB=6.0V, IC=0 IC=10mA, IB=0 VCE=5V, IC=1.0A Min. — — 400 15 — — 4 2.0 Typ. — — — — — — — 2.5 Max. 10 10 — 30 1.5 1.6 — 4.0 V V MHz us Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS VCE=10V, IC=0.5A IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd.
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