Thinki Semiconductor MM80FU040PC
Common Cathode Fast Recovery Epitaxial Diode
GENERAL DESCRIPTION
MM80FU040PC using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 400 V V RRM Maximum Repetitive Reverse Voltage 400 V I F(AV) Average Forward Current TC=110°C, Per Diode TC=110°C, Per Package 40 A 80 A IF(RMS) RMS Forward Current TC=110°C, Per Diode 56 A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 400 A PD Power Dissipation 156 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended(M3) 1.1 N●m R θJC Thermal Resistance WeightELECTRICAL CHARACTERISTICS
Junction-to-Case 0.8 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter I RM Reverse Leakage Current Test Conditions VR=400V VR=400V, TJ=125°C Min. Typ. Max. Unit -- -- 10 µA -- -- 150 µA VF Forward Voltage I F =40A IF=40A,...