MUR3010PT Datasheet | Thinki Semiconductor

Features Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: o 260 C, 0.16”(4.06mm)from case for 10 seconds .142(3.60) .125(3.20) .087(2.20) .070(1.80) .600(15.25) .580(14.75) .776(19.70) .819(20.80) .095(2.40) .126(3.20) .110(2.80) .050(1.25) .045(1.15) .130(3.30) .145(3.70) .798(20.25) .777(19.75) Mechanical Data Cases: TO-3PN Package Type Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 0.2 ounce, 5.6 grams .030(0.75) .017(0.45) .225(5.70) .204(5.20) .225(5.70) .204(5.20) Positive Suffix "PT" Negative Suffix "PA" Doubler Suffix "GD" Rating at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. mon Cathode Suffix "PT" mon Anode Suffix "PA" Anode and Cathode Coexistence Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL VRRM VRMS VDC IF(AV) MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 15.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200...