Thinki Semiconductor MUR8020PT
Ultra Fast Recovery Rectifiers
| Part No. | MUR8020PT |
|---|---|
| Datasheet | MUR8020PT Download |
| Manufacturer |  Thinki Semiconductor |
| Description | Ultra Fast Recovery Rectifiers |
| Buy | Stock & Price |
GENERAL DESCRIPTION
MUR8020PT using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.ABSOLUTE MAXIMUM RATINGS
Parameter Repetitive peak reverse voltage Symbol VRRM Test Conditions Values 200 Units V Continuous forward current IF(AV) Tc =110°C 80 Single pulse forward current IFSM Tc =25°C A 800 Maximum repetitive forward current IFRM Square wave, 20kHZ 320 Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C Electrical characteristics (Ta=25°Cunless otherwise specified) Parameter Breakdown voltage Blocking voltage Symbol VBR, VR Forward voltage (Per Diode) VF Test Conditions IR=100µA IF=40 A IF=40 A, Tj =125°C Reverse leakage IR current(Per Diode) Reverse recovery time(Per Diode) trr Thermal characteristics Paramter VR= VRRM Tj=150°C, VR=200V IF=0.5A, IR=1A, IRR=0.25A IF=1A,VR=30V, di/dt =-200A/us Symbol Junction-to-Case RθJC Min Typ. 200 0.97 0.86 37 25 Typ 0.8 Max. Units 1.20 V 1.00 10 µA 100 50 ns 40 Units ℃/W Rev.08C © 2006 Thinki Semiconductor Co., Ltd.