SMCJ350C Datasheet | Thinki Semiconductor

Features Working peak reverse voltage range - 5.0V to 440V. Peak power dissipation 1500W @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Glass passivated junction. Fast response time: typically less than 1 ns for Uni-direction. Less than 5 ns for Bi-direction, from 0 Volts to BV min z Typical IR less than 1u A above 10V. z Plastic material has UL flammability classification 94V-O z Ro HS pliant in lead-free versions z z z z z z SMC/DO-214AB Unit : inch (mm) .128(3.25) .108(2.75) .280(7.11) .260(6.60) .012(.305) .006(.152) .103(2.62) .079(2.00) Mechanical Characteristics z CASE: Void-free, JEDEC DO-214AB Molded Plastic over glass passivated junction. z Mounting Position: Any z Terminal: Solder plated, solderable per MIL-STD-750. .050(1.27) .030(0.76) .320(8.13) .305(7.75) .008(.203) .002(.051) z Note: Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device. Maximum Ratings And Characteristics @ 25°C Ambient Temperature (unless otherwise noted) Parameter Symbol Value Units Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1) Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3) Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load, (JEDEC Method) (Note 2. 3) Operating Junction Temperature Range Storage Temperature Range PPPM IPPM IFSM TJ TSTG Min 1500 See Table 1 200 -55 to 150 -55 to 150 .245(6.22) .220(5.59) W Amps Amps °C °C Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2. 2. Mounted on 5.0mm2 (0.03mm thick) Copper Pads to each terminal. 3. 8.3 ms single half sine-wave, or equivalent square wave, Duty cycle=4 pluses per minute maximum. Page 1/5 © 2006 Thinki Semiconductor Co.,Ltd. http://.thinkisemi./ Free Datasheet http://../ SMCJ5.0 thru SMCJ440CA ® Electrical Specification @ Tamb 25°C Type Number (Uni) SMCJ5.0 SMCJ5.0A SMCJ6.0 SMCJ6.0A SMCJ6.5 SMCJ6.5A SMCJ7.0 SMCJ7.0A SMCJ7.5...