TSF10N60C
TSF10N60C is 600V Insulated N-Channel Type Power MOSFET manufactured by Thinki Semiconductor.
Features
- RDS(on) (Max 0.75 Ω )@VGS=10V
- Gate Charge (Typical 45n C)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
1. Gate {
{ 2. Drain
- ◀▲
- -
{ 3. Source
BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application.
TO-220F
23 1
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C)
IDM VGS EAS EAR dv/dt
Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche...
