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TSF10N60C - 600V Insulated N-Channel Type Power MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.75 Ω )@VGS=10V.
  • Gate Charge (Typical 45nC).
  • Improved dv/dt Capability.
  • High ruggedness.
  • 100% Avalanche Tested 1. Gate { { 2. Drain.
  • ◀▲.
  • { 3. Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A General.

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Datasheet Details

Part number TSF10N60C
Manufacturer Thinki Semiconductor
File Size 1.14 MB
Description 600V Insulated N-Channel Type Power MOSFET
Datasheet download datasheet TSF10N60C Datasheet

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TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application.