Thinki Semiconductor TSF8N65C
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. The TO-220F pkg is well suited for adaptor power unit and small power inverter application.| Part No. | TSF8N65C |
|---|---|
| Datasheet | TSF8N65C Download |
| Manufacturer |  Thinki Semiconductor |
| Description | 7.5A 650V Insulated N-Channel Type Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(on) (Max 1.0 Ω )@VGS=10V
● Gate Charge (Typical 48nC)
● Improved dv/dt Capability
● 100% Avalanche Tested 1. Gate{ { 2. Drain { ◀▲
● { 3. Source
GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.ABSOLUTE MAXIMUM RATINGS
BVDSS = 650V RDS(ON) = 1.0 ohm ID = 7.5A TO-220F DS G Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Min. - (Note 1) (Note 2) (Note 1) (Note 3) Value 650 7.5 4.6 30 ±30 560 14 4.5 140 1.14 - 55 ~ 150 300 Value Typ.
