U55NF06
DESCRIPTION
12 3 TO-251/IPAK
Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.
TO-220/TO-220F
- FEATURES
12 3 TO-252/DPAK
- RDS(ON) = 23mȍ@VGS = 10 V
- Ultra low gate charge ( typical 30 n C )
- Low reverse transfer capacitance ( CRSS = typical 80 p F )
- Fast switching capability
- 100% avalanche energy specified
- Improved dv/dt capability
- SYMBOL
U55NF06 P55NF06 F55NF06 D55NF06 TO-251/IPAK TO-220 TO-220F TO-252/DPAK
- APPLICATION Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
2.Drain
1.Gate
- ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VDSS VGSS
3.Source
RATINGS UNIT 60 V ±20 V TC = 25°C 50 A Continuous Drain Current ID TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Single...
