U55NF06 - N-CHANNEL POWER MOSFET TRANSISTOR

Datasheet Summary

Description

Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed.

Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

Features

S 12 3 TO-252/DPAK.
RDS(ON) = 23mȍ@VGS = 10 V.
Ultra low gate charge ( typical 30 nC ).
Low reverse transfer capacitance ( CRSS = typical 80 pF ).
Fast switching capability.
100% avalanche energy specified.
Improved dv/dt capability.
SYMBOL U55NF06 P55NF06 F55NF06 D55NF06 TO-251/IPAK TO-220 TO-220F TO-252/DPAK.

Thinki Semiconductor

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Datasheet Details

Part number	U55NF06
Manufacturer	Thinki Semiconductor
File Size	299.71 KB
Description	N-CHANNEL POWER MOSFET TRANSISTOR
Datasheet	U55NF06 Datasheet
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55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.

Published: Jan 1, 2014 |