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435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366
Ph. 973-579-7227 FAX 973-300-3600
FDG05 Ge Photodiode
--Large Active Area --Low Capacitance
Electrical Characteristics
0.010
0.010
Ceramic Substrate
Spectral Response: Active Diameter:
Rise/Fall Time (RL=50Ω): Cut Off Frequency (50Ω, 3V):
NEP@980nm: Dark Current: Shunt Resistance (RSH): Junction Capacitance (CJ):
Package: Package Size:
800-1800nm 5.0mm 220ns (3V)
1.6 MHz (typ.) 4.0 x 10-12 W/√Hz 40 A max (3V) 2k @ 25 C (typ) 3000pF @ 5V (typ) TO-8 ceramic 0.275” x 0.310”
Ø5.0mm ACTIVE AREA
0.275
0.115 0.020
0.135 0.