Thunder 2SK2837
The 2SK2837 utilizes the latest processing techniques to achieve low on-resistance per silicon area. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. It can be used in a wide variety of applications.DESCRIPTION
Additional features of this MOSFET are 150℃ operating junction temperature and high repetitive peak current capability. It can be used in a wide variety of applications.GENERAL FEATURES
● VDS=500V,ID=20A● Low ON Resistance,RDS(ON) =0.20Ω@VGS=10V,ID=10A
● Low reverse transfer capacitance
● Low Qg for fast response
● Short fall & rise times for fast switching
● 100% single pulse avalanche energy Test THUNDER TO-3PS Application High speed,high current switching applications Chopper regulator,DC-DC converte r and motor drive applications Product Summary VDS RDS(on) ID 500V 0.20Ω 20A
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=10mH, Rg=25Ω) Gate-Source voltage Power dissipation (TC = 25°C) Operating junction and storage temperature Rev.A01 Symbol Value VDS ID IDM EAS VGS PD Tj ,Tstg 500 20 80 1930 ±30 255 -55...+150 Unit V A A mJ V W °C 1 Thermal Resistance Parameter Thermal resistance, junction – case.