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HBR20200 Datasheet Schottky Barrier Diode

Manufacturer: Tianjin Micro Electronic

Overview: 亚微电子 HBR20200 主要参数 MAIN CHARACTERISTICS 肖特基势垒二极管 SCHOTTKY BARRIER DIODE IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.

HBR20200 datasheet preview

Datasheet Details

Part number	HBR20200
Manufacturer	Tianjin Micro Electronic
File Size	484.62 KB
Description	SCHOTTKY BARRIER DIODE
Datasheet	HBR20200-TianjinMicroElectronic.pdf

Key Features

Common cathode structure 低功耗，高效率 Low power loss, high 良好的高温特性 efficiency High Operating 有过压保护环，高可靠性环保（RoHS）产品 Junction Temperature Guard ring for overvoltage protection， High reliability RoHS product 天津亚微电子材料科技有限公司 Tianjin Micro Electronic Material Technology Co,. Ltd. TEL： (86) 22-2532 3492 地址：天津市经济技术开发区第四大街相安路 16-2 号 ADD：No.16-2 Xiangan Road TEDA Tianjin China FAX：(86) 22-2521 0431 亚微电子肖特基势垒二极管.

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