XP132A0265SR Datasheet | Torex Semiconductor

.. NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.065Ω (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP132A0265SR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds(on)=0.065Ω(Vgs=-5V) : Rds(on)=0.12Ω(Vgs=-2.5V) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP-8 Ta=25 : PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 ±12 -6 -20 -6 2.5 150 -55~150 UNITS V V A A A W : : Note: When implemented on a glass epoxy PCB DC Characteristics .. SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=±12V, Vds=0V Id=-1m A, Vds=-10V Id=-3A, Vgs=-5V Id=-3A, Vgs=-2.5V Id=-3A, Vds=-10V If=-6A, Vgs=0V MIN TYP MAX -10 ±10 -0.5 0.055 0.09 8 -0.85 1.1 0.065 0.12 Ta=25 : UNITS µA µA V Ω Ω S V PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 1100 600 220 MAX Ta=25 : UNITS p F p F p F Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-3A Vdd=-10V CONDITIONS MIN TYP 15 15 50 30 MAX Ta=25 : UNITS ns ns ns ns Thermal Characteristics PARAMETER...