Datasheet4U Logo Datasheet4U.com

XP134A1275SR - Power MOSFET

Description

The XP134A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Two FET devices are built-into the one package.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

Features

  • Low On-State Resistance :Rds(on)=0.075Ω(Vgs=-4.5V) :Rds(on)=0.115Ω(Vgs=-2.5V) Ultra High-Speed Switching Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure 2 FET Devices Built-in Package : SOP-8.
  • PIN.

📥 Download Datasheet

Datasheet preview – XP134A1275SR

Datasheet Details

Part number XP134A1275SR
Manufacturer Torex Semiconductor
File Size 437.90 KB
Description Power MOSFET
Datasheet download datasheet XP134A1275SR Datasheet
Additional preview pages of the XP134A1275SR datasheet.

📁 Similar Datasheet

  • XP1334GEU - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP1000 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1000-BD - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1001 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1003 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1003-BD - Power Amplifier (Mimix Broadband)
  • XP1005 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1005-BD - Power Amplifier (MA-COM)
  • XP1006 - GaAs MMIC Power Amplifier (Mimix Broadband)
  • XP1006-FA - GaAs MMIC Power Amplifier (Mimix Broadband)
Other Datasheets by Torex Semiconductor

Full PDF Text Transcription

Click to expand full text
XP134A1275SR Power MOSFET ETR1115_001 ■GENERAL DESCRIPTION The XP134A1275SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance :Rds(on)=0.075Ω(Vgs=-4.5V) :Rds(on)=0.115Ω(Vgs=-2.5V) Ultra High-Speed Switching Driving Voltage : -2.
Published: |