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NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP151A11B0MR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.12Ω ( Vgs = 10V ) : Rds (on) = 0.17Ω ( Vgs = 4.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 4.
XP151A11B0MR Datasheet
