Datasheet4U Logo Datasheet4U.com

XP234N08013R-G - N-channel MOSFET

Features

  • On-State Resistance Driving voltage Environmentally Friendly : RDS(on)=0.29Ω @VGS =10V : 4.5V : EU RoHS Compliant, Pb Free.

📥 Download Datasheet

📁 Similar Datasheet

  • XP2344GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP2301GN - P-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP2302GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP2306AGN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP2306GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP2314GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP2318GEN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
  • XP231P02017R-G - P-channel MOSFET (Torex)
  • XP231P0201TR-G - P-channel MOSFET (Torex)
  • XP2322GN - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (YAGEO)
Other Datasheets by Torex Semiconductor

Full PDF Text Transcription

Click to expand full text
XP234N08013R-G N-channel MOSFET 30V, 0.8A ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)=0.29Ω @VGS =10V : 4.
Published: |