Datasheet4U.com

XBS013V1DR-G Datasheet PDF

TOREX SEMICONDUCTOR XBS013V1DR-G

Schottky Barrier Diode

Part No. XBS013V1DR-G
Datasheet XBS013V1DR-G Download
Manufacturer
TOREX SEMICONDUCTOR
Description Schottky Barrier Diode
Buy Stock & Price
XBS013V1DR-G datasheet page 1 preview

FEATURES

Ultra Small Package Low VF

APPLICATIONS

Low Current Rectification ETR1618-005

ABSOLUTE MAXIMUM RATINGS

PARMETER SYMBOL RATINGS Repetitive Peak Voltage VRM 30 Reverse Voltage (DC) VR 30 Forward Current (Average) Peak Forward Surge Current *1 IF(AV) IFSM 100 0.5 Junction Temperature Tj 150 Storage Temperature Range Tstg -40 +150 *1) 60Hz Half sine wave, 1 cycle, Non-Repetitive. Ta=25 UNITS V V mA A PACKAGING INFORMATION 0.30±0.05 0.20±0.03 MARKING RULE TOP BOTTOM ① 1 (Product Number) a,b,c,d,e Lot Number Unit: mm PRODUCT NAME PRODUCT NAME PACKAGE XBS013V1DR-G * USP-2B01 * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket.

ELECTRICAL CHARACTERISTICS

PARAMETER Forward Voltage Reverse Current SYMBOL VF1 IR TEST CONDITIONS IF=10mA VR=10V MIN. - LIMITS TYP. - Ta=25 MAX. 0.37 7 UNITS V A
●NOTES ON USE 1. A package of this IC is a surface mounted package 0603 size with backside electrode structure.
XBS013V1DR-G page 2 preview XBS013V1DR-G page 3 preview