TOREX SEMICONDUCTOR XBS206S19R-G
Schottky Barrier Diode
| Part No. | XBS206S19R-G |
|---|---|
| Datasheet | XBS206S19R-G Download |
| Manufacturer |  TOREX SEMICONDUCTOR |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
Forward Voltage : VF=0.615V (TYP.) Forward Current : IF(AV)=2A Repetitive Peak Reverse Voltage : VRM=60V●
ABSOLUTE MAXIMUM RATINGS
Ta=25℃ PARAMETER SYMBOL RATINGS UNITS Repetitive Peak Reverse Voltage VRM Reverse Voltage VR Forward Current (Average) IF(AV) Non Continuous Forward Surge Current(*1) IFSM Junction Temperature Tj 60 V 60 V 2 A 45 A 125 ℃ Storage Temperature Range Tstg -55～+150 ℃ (*1) Non continuous high amplitude 60Hz half-sine wave. 1.5±0.15●
APPLICATIONS
●Rectification●Protection against reverse connection of battery
●PACKAGING INFORMATION SMA-XG Unit : mm 4.45±0.2 2.6±0.2 2.1±0.2
●MARKING RULE ①②③④⑤⑥: 206S19(Product Number) ⑦⑧ : Assembly Lot Number 2±0.15 5.1±0.25 1.2±0.3 (0.2) 0.2MAX
●PRODUCT NAME PRODUCT NAME XBS206S19R-G * PACKAGE SMA-XG ORDER UNIT 2,000pcs/Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
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ELECTRICAL CHARACTERISTICS
PARAMETER Forward Current Reverse Current Inter-Terminal Capacity Reverse Recovery Time SYMBOL VF IR1 IR2 Ct trr CONDITIONS IF=2A VR=30V VR=60V VR=1V , f=1MHz IF=IR=10mA , irr=1mA MIN. - TYP.
