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XBS504V1AR-G Datasheet PDF

TOREX SEMICONDUCTOR XBS504V1AR-G

XBS504V1AR-G is Not Recommended for New Designs.
Part No. XBS504V1AR-G
Datasheet XBS504V1AR-G Download
Manufacturer
TOREX SEMICONDUCTOR
Description Schottky Barrier Diode
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XBS504V1AR-G datasheet page 1 preview

FEATURES

Forward Voltage Forward Current Repetitive Peak Reverse Voltage : VF=0.49V (TYP.) : IF(AV)=5A : VRM=40V
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APPLICATIONS

●Rectification
●Protection against reverse connection of battery
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ABSOLUTE MAXIMUM RATINGS

Ta=25℃ PARAMETER SYMBOL RATINGS UNITS Repetitive Peak Voltage VRM Reverse Voltage VR Forward Current (Average) IF(AV) Peak Forward Surge Current (*1) IFSM Junction Temperature Tj 40 V 40 V 5 A 150 A 150 ℃ Storage Temperature Range Tstg -50~+150 ℃ (*1) Non continuous high amplitude 60Hz half-sine wave. I
●PACKAGING INFORMATION Unit: mm A D B H F F F1
●PRODUCT NAME PRODUCT NAME XBS504V1AR-G (*1) PACKAGE SMBT ORDER UNIT 4,000pcs / Reel (*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. I1 Symbol A B D F F1 H I I1 Min 3.80 3.30 5.00 0.45 2.55 1.10 1.85 2.40 Typ 4.00 3.50 5.20 0.60 2.75 1.20 2.00 2.60 Max 4.20 3.70 5.40 0.75 2.95 1.30 2.15 2.80 1/5 XBS504V1AR-G XBS504V1AR-G is Not Recommended for New Designs.
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ELECTRICAL CHARACTERISTICS

PARAMETER Forward Voltage Reverse Current SYMBOL VF IR CONDITIONS IF=5A VR=40V MIN. - TYP.
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