TOREX SEMICONDUCTOR XP131A0232SR
The XP131A0232SR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. The small SOP-8 package makes high density mounting possible.NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.032Ω (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. Low on-state resistance : Rds(on)=0.032Ω (Vgs=4.5V) : Rds(on)=0.045Ω (Vgs=2.5V) : Rds(on)=0.08Ω (Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 PARAMETER SYMBOL Ta=25°C RATINGS UNITS Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Vdss Vgss Id Idp Idr 20 V ±8 V 8A 25 A 8A Continuous Channel Power Dissipation (note) Pd 2.5 W Channel Temperature Tch Storage Temperature Tstg