GENERAL DESCRIPTION
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. s APPLICATIONS
q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s FEATURES
Low on-state resistance: Rds(on)=0.055Ω(Vgs=4.5V) Rds(on)=0.095Ω(Vgs=2.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 2.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source SOT-89 (TOP VIEW) s Equivalent Circuit s ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 ±12 4 16 4 2 150 -55~150 Ta=25 : UNITS V V A A A W : : 1 2 3 Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature N-Channel MOS FET (1 device...
TOREX SEMICONDUCTOR
