TOREX SEMICONDUCTOR XP161A1355PR-G
The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. The small SOT-89 package makes high density mounting possible.GENERAL DESCRIPTION
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage.●
APPLICATIONS
●Notebook PCs●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
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FEATURES
Low On-State Resistance : Rds(on)=0.05Ω@Vgs=4.5V : Rds(on)=0.07Ω@Vgs=2.5V : Rds(on)=0.15Ω@Vgs=1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Package : SOT-89 11 3x 1●PIN CONFIGURATION/ MARKING G:Gate S:Source D:Drain
●PIN CONFIGURATION PRODUCT PACKAGE XP161A1355PR-G* SOT-89 ORDER UNIT 1,000pcs/Reel (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant * x represents production lot number.
●EQUIVALENT CIRCUIT
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss ±8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A...