Datasheet4U.com

XP161A1355PR-G Datasheet PDF

TOREX SEMICONDUCTOR XP161A1355PR-G

The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. The small SOT-89 package makes high density mounting possible.
Part No. XP161A1355PR-G
Datasheet XP161A1355PR-G Download
Manufacturer
TOREX SEMICONDUCTOR
Description Power MOSFET
Buy Stock & Price
XP161A1355PR-G datasheet page 1 preview

GENERAL DESCRIPTION

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage.
●

APPLICATIONS

●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
●

FEATURES

Low On-State Resistance : Rds(on)=0.05Ω@Vgs=4.5V : Rds(on)=0.07Ω@Vgs=2.5V : Rds(on)=0.15Ω@Vgs=1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Package : SOT-89 11 3x 1
●PIN CONFIGURATION/ MARKING G:Gate S:Source D:Drain
●PIN CONFIGURATION PRODUCT PACKAGE XP161A1355PR-G* SOT-89 ORDER UNIT 1,000pcs/Reel (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant * x represents production lot number.
●EQUIVALENT CIRCUIT
●

ABSOLUTE MAXIMUM RATINGS

Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss ±8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A...
XP161A1355PR-G page 2 preview XP161A1355PR-G page 3 preview