TOREX SEMICONDUCTOR XP222P0801TR-G
P-channel MOSFET
FEATURES
On-State Resistance Driving voltage Environmentally Friendly : RDS(on)=0.56Ω@VGS =-4.5V : -1.8V : EU RoHS Compliant, Pb Free●
APPLICATIONS
●Switching ETR11068-001● EQUIVALENT CIRCUIT 3
● PIN CONFIGURATION
●SOT-23(TO-236) Drain 3 1 2 1 Gate 2 Source
● PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP222P0801TR-G * SOT-23(TO-236) 3,000 pcs/ Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) (*1) Channel Power Dissipation (*2) Junction Temperature Storage Temperature (*1) PW≦10μs,duty cycle≦1% (*2) When implemented on a PCB defined by JESD51-7 VDSS VGSS ID IDP Pd TJ Tstg RATINGS -20 ±8 -0.8 -1.6 0.4 150 -55~150 Ta=25℃ UNITS V V A A W ℃ ℃ 1/6 XP222P0801TR-G●
ELECTRICAL CHARACTERISTICS
PARAMETER Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Sou...