TOREX SEMICONDUCTOR XP232N03013R-G
N-channel MOSFET
FEATURES
On-State Resistance Driving voltage Environmentally Friendly : RDS(on)=2.0Ω @VGS =10V : 4.5V : EU RoHS Compliant, Pb Free●
APPLICATIONS
●Switching ETR11054-001● EQUIVALENT CIRCUIT 3
● PIN CONFIGURATION
●SOT-323-3A Drain 3 1 2 1 2 Gate Source
● PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP232N03013R-G * SOT-323-3A 3,000pcs/ Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (DC) ID Drain Current(Pulse) (*1) IDP Channel Power Dissipation (*2) Pd Junction Temperature TJ Storage Temperature Tstg *(1) PW≦10μs,duty cycle≦1% *(*2) When implemented on a PCB defined by JESD51-7 RATINGS 30 ±20 0.3 0.6 0.35 150 -55~150 Ta=25℃ UNIT V V A A W ℃ ℃ 1/6 XP232N03013R-G●
ELECTRICAL CHARACTERISTICS
PARAMETER Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Resista...