TOREX SEMICONDUCTOR XP233N0501TR-G
N-channel MOSFET
FEATURES
On-State Resistance Driving Voltage Environmentally Friendly : RDS(on)=1.5Ω @VGS =4.5V : 2.5V : EU RoHS Compliant, Pb Free●
APPLICATIONS
●Switching●EQUIVALENT CIRCUIT
●PIN CONFIGURATION
●SOT-23(TO-236) Drain 3 1 Gate 2 Source
●PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP233N0501TR-G * SOT-23(TO-236) 3,000 pcs/ Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant
●
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (DC) ID Drain Current(Pulse) (*1) IDP Channel Power Dissipation (*2) Pd Junction Temperature TJ Storage Temperature Tstg (*1)PW≦10μs,duty cycle≦1% (*2)When implemented on a PCB defined by JESD51-7 RATINGS 30 ±20 0.5 1 0.4 150 -55~+150 Ta=25℃ UNITS V V A A W ℃ ℃ 1/6 XP233N0501TR-G●
ELECTRICAL CHARACTERISTICS
PARAMETER Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Resistance Input Capaci...