XP263N1001TR-G
XP263N1001TR-G is N-channel MOSFET manufactured by Torex Semiconductor.
FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)＝0.25Ω @VGS =10V : 4.5V
: EU Ro HS pliant, Pb Free
- APPLICATIONS
- Switching
- EQUIVALENT CIRCUIT
- PIN CONFIGURATION
- SOT-23(TO-236)
Drain 3
1 Gate
2 Source
- PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
- SOT-23(TO-236)
3,000 pcs/ Reel
- The “-G” suffix denotes Halogen and Antimony free as well as being fully EU Ro HS pliant
- ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current(Pulse) (- 1) Channel Power Dissipation (- 2) Junction Temperature Storage Temperature (- 1)PW≦10μs,duty cycle≦1% (- 2)When implemented on a PCB defined by JESD51-7
VDSS VGSS
ID IDP Pd TJ Tstg
RATINGS
60 ±20
1 2 0.4 150 -55~150
Ta=25℃ UNIT
V V A A W ℃ ℃
1/6
- ELECTRICAL CHARACTERISTICS
PARAMETER
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage
Drain-Source On Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage
SYMBOL
TEST CONDITIONS
V(BR)DSS IDSS...
