1R5DL41A - Silicon Epitaxial Junction Type High-Efficiency Rectifier

Toshiba Semiconductor

Datasheet Details

Part number	1R5DL41A
Manufacturer	Toshiba Semiconductor
File Size	95.96 KB
Description	Silicon Epitaxial Junction Type High-Efficiency Rectifier
Datasheet	1R5DL41A Datasheet
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Full PDF Text Transcription

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1R5DL41A TOSHIBA High Efficiency Rectifier (HED) Silicon Epitaxial Junction Type 1R5DL41A Switching Mode Power Supply Applications · Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.5 A (Ta = 25°C) · Very Fast Reverse-Recovery Time: trr = 35 ns (max) · Low Forward Voltage: VFM = 0.98 V (max) · Available to Reduce Switching Losses and Output Noise. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current (Ta = 25°C) Peak one cycle surge forward current (non-repetitive) Junction temperature Storage temperature Symbol VRRM IF (AV) IFSM Tj Tstg Rating 200 1.

Published: Mar 23, 2005 |