1SS154 datasheet PDF by Toshiba.
| Part number | 1SS154 |
|---|---|
| Datasheet | 1SS154_ToshibaSemiconductor.pdf |
| File Size | 143.59 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications Small package. Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg −30 to 125 °C Note: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| 1SS104 | SILICON DIODE |
| 1SS181 | Silicon Epitaxial Planar Type Diode |
| 1SS184 | Silicon Epitaxial Planar Type Diode |
| 1SS187 | Silicon Epitaxial Planar Type Diode |
| 1SS190 | Silicon Epitaxial Planar Type Diode |
| 1SS193 | Silicon Epitaxial Planar Type Diode |
| 1SS196 | Silicon Epitaxial Planar Type Diode |
| 1SS200 | Diode |
| 1SS201 | Diode |
| 1SS226 | Switching Diodes |
