1SS154 Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications - Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range 30 m A Tj °C Tstg - 30 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Forward voltage Total capacitance Symbol VR IR VF (1) VF (2) CT Test Condition IR = 10 μA VR = 5 V IF = 0.1 m A IF = 10 m A VR = 0, f = 1 MHz Marking Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 1-3G1A Weight: 12 mg (typ.) Min Typ. Max...