1SS154 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	1SS154
Manufacturer	Toshiba
File Size	143.59 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS154 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
1SS15A1	(1SS15x1) Schottky Rectifier	ETC
1SS15B1	(1SS15x1) Schottky Rectifier	ETC
1SS15C1	(1SS13C1 - 1SS15C1) high speed low noise switching diode	HUAGAO
1SS15C1	(1SS15x1) Schottky Rectifier	ETC
1SS101	SUPER HIGH SPEED SWITCHING DIODE	XIN SEMICONDUCTOR

Other Datasheets by Toshiba

Part Number	Description
1SS104	SILICON DIODE
1SS181	Silicon Epitaxial Planar Type Diode
1SS184	Silicon Epitaxial Planar Type Diode
1SS187	Silicon Epitaxial Planar Type Diode
1SS190	Silicon Epitaxial Planar Type Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications • Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 6 V IF 30 mA Tj 125 °C Tstg −30 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.