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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
1SS201
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
P 200 mW JEDEC
―
Junction temperature Storage temperature range
Tj Tstg
125 °C EIAJ
―
−55~125
°C
TOSHIBA Weight: 0.13g
1−4E2A
(*) Unit rating. Total rating = Unit rating ×1.5.
1SS201 Datasheet
