1SS201
1SS201 is Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9p F (typ.)
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
85 V
Reverse voltage
VR 80 V
Maximum (peak) forward current
300 (- ) m A
Average forward current
100 (- ) m A
Surge current (10ms)
IFSM
2 (- )
Power dissipation
P 200 m W JEDEC
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Junction temperature Storage temperature range
Tj Tstg
125 °C...
