1SS226 - Switching Diodes

Toshiba

Key Features

(1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit S-Mini 1SS226 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-09 2022-11-22 Rev.7.0 1SS226 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80.

1SS226 switching diodes by Toshiba - Datasheet Preview

Datasheet Details

Part number	1SS226
Manufacturer	Toshiba
File Size	219.29 KB
Description	Switching Diodes
Datasheet	1SS226 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit S-Mini 1SS226 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-09 2022-11-22 Rev.7.0 1SS226 4.