• Part: 1SS321
  • Description: Silicon Epitaxial Schottky Barrier Type Diode
  • Manufacturer: Toshiba
  • Size: 268.13 KB
Download 1SS321 Datasheet PDF
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Datasheet Summary

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type Low-Voltage High-Speed Switching - AEC-Q101 Qualified (Note1) - Low forward voltage: VF(2) = 0.42 V (typ.) - Low reverse current: IR = 500 nA (max) - Small package: SC-59 Note1: For detail information, please contact to our sales. Unit:...