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1SS321 - Silicon Epitaxial Schottky Barrier Type Diode

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Part number 1SS321
Manufacturer Toshiba Semiconductor
File Size 268.13 KB
Description Silicon Epitaxial Schottky Barrier Type Diode
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching  AEC-Q101 Qualified (Note1)  Low forward voltage: VF(2) = 0.42 V (typ.)  Low reverse current: IR = 500 nA (max)  Small package: SC-59 Note1: For detail information, please contact to our sales. 1SS321 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature VRM VR IFM IO IFSM P Tj Tstg 12 V 10 V 150* mA 50* mA 1000* mA 150 mW 125 °C −55 to 125 °C JEDEC TO−236MOD JEITA SC−59 TOSHIBA 2-3F1S Weight: 12 mg (typ.) Note: Using continuously under heavy loads (e.g.
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