1SS321 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package:.
1SS321 Datasheet
| Part number | 1SS321 |
|---|---|
| Download | 1SS321 Datasheet (PDF) |
| File Size | 268.13 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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