| Part number | 1SS321 |
|---|---|
| Datasheet | 1SS321_ToshibaSemiconductor.pdf |
| File Size | 268.13 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package:.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS321 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | SEMTECH ELECTRONICS |
 |
1SS321 | LOW VOLTAGE HIGH SPEED SWITCHING | Guangdong Kexin Industrial |
| Part Number | Description |
|---|---|
| 1SS322 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |
| 1SS306 | Silicon Epitaxial Planar Type Diode |
| 1SS307 | Silicon Epitaxial Planar Type Diode |
| 1SS308 | Silicon Epitaxial Planar Type Diode |
| 1SS309 | Silicon Epitaxial Planar Type Diode |
| 1SS311 | Diode |
| 1SS312 | Silicon Epitaxial Planar Type Diode |
