1SS322 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba

Datasheet Details

Part number	1SS322
Manufacturer	Toshiba
File Size	290.55 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS322 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
1SS322	LOW VOLTAGE HIGH SPEED SWITCHING DIODES	Kexin
1SS321	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE	SEMTECH ELECTRONICS
1SS321	LOW VOLTAGE HIGH SPEED SWITCHING	Guangdong Kexin Industrial
1SS300	ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES	Kexin
1SS301	SUPER HIGH SPEED SWITCHING DIODE	XIN SEMICONDUCTOR

Other Datasheets by Toshiba

Part Number	Description
1SS321	Silicon Epitaxial Schottky Barrier Type Diode
1SS300	Silicon Epitaxial Planar Type Diode
1SS301	Silicon Epitaxial Planar Type Diode
1SS302	Diode
1SS306	Silicon Epitaxial Planar Type Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching  Low forward voltage  Low reverse current  Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC−70 1SS322 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ― Storage temperature Tstg −55 to 125 °C JEITA SC−70 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1−2P1D Weight: 0.006g (typ.) temperature, etc.