1SS322 datasheet by Toshiba.
| Part number | 1SS322 |
|---|---|
| Datasheet | 1SS322_ToshibaSemiconductor.pdf |
| File Size | 290.55 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Type Diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching Low forward voltage Low reverse current Small package : mm Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation P 100 mW Junction temperature Tj 125 °C JEDEC ―...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS322 | LOW VOLTAGE HIGH SPEED SWITCHING DIODES | Kexin |
| Part Number | Description |
|---|---|
| 1SS321 | Silicon Epitaxial Schottky Barrier Type Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |
| 1SS302 | Silicon Epitaxial Planar Type Diode |
| 1SS306 | Silicon Epitaxial Planar Type Diode |
| 1SS307 | Silicon Epitaxial Planar Type Diode |
| 1SS308 | Silicon Epitaxial Planar Type Diode |
| 1SS309 | Silicon Epitaxial Planar Type Diode |
| 1SS311 | Diode |
| 1SS312 | Silicon Epitaxial Planar Type Diode |
