1SS336 - Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS336
Manufacturer	Toshiba Semiconductor
File Size	256.57 KB
Description	Diode
Datasheet	1SS336 Datasheet
Additional preview pages of the 1SS336 datasheet.

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P 600 * 200 * 6* 150 mA mA A mW Junction temperature Storage temperature Tj 150 °C JEDEC Tstg −55~150 °C JEITA TD-236MOD SC-59 Note: Using continuously under heavy loads (e.g.

Published: Mar 23, 2005 |