1SS336 Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application Unit: mm z Small package : SC-59 z Low forward voltage : VF (3) = 0.84V (typ.) z Fast reverse recovery time : trr = 7ns (typ.) z Small total capacitance : CT = 7p F (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation IFM IO IFSM P - 200 - 6- 150 m A m A A m W Junction temperature Storage temperature Tj 150 °C JEDEC Tstg - 55~150 °C JEITA TD-236MOD SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-3G1E temperature/current/voltage and the significant change in Weight: 0.012g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Circuit Test Condition ― IF = 10m A ― IF = 100m A ― IF = 200m A ― VR = 30V ― VR =...