1SS374
1SS374 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
High Speed Switching Application
Unit: mm z Small package z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5m A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
- m A
Average forward current Surge current (10ms) Power dissipation
IO IFSM
- 1- 150 m A A m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
Operating temperature range
Topr
- 40 to 100
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate,...
