The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV237
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Forward current Junction temperature Storage temperature range
Symbol
VR IF Tj Tstg
Rating
50 50 125 -55~125
Unit
V mA °C °C
1SV237
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Forward voltage Total capacitance Series resistance
Symbol
VR IR VF CT rs
Test Condition
IR = 10 mA VR = 50 V IF = 50 mA VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-3J1A
Weight: 0.013 g (typ.)
Min Typ. Max Unit
50 ¾ ¾ ¾ ¾ 0.1 ¾ 0.95 ¾ ¾ 0.25 ¾ ¾ 3.
1SV237 Datasheet
