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1SV262 - Variable Capacitance Diode

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Part number 1SV262
Manufacturer Toshiba
File Size 152.90 KB
Description Variable Capacitance Diode
Datasheet download datasheet 1SV262 Datasheet

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV262 1SV262 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 12.5 (typ.) • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error. • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Peak reverse voltage Junction temperature Storage temperature range VR VRM Tj Tstg 34 36 (RL = 10 kΩ) 125 −55~125 V V °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.