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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV262
1SV262
CATV Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 12.5 (typ.) • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error. • Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Peak reverse voltage Junction temperature Storage temperature range
VR VRM
Tj Tstg
34 36 (RL = 10 kΩ)
125 −55~125
V V °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.