2SA1049 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1049
Manufacturer	Toshiba
File Size	182.67 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1049 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1049 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2459. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −20 mA JEDEC ― Collector power dissipation PC 200 mW JEITA ― Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C TOSHIBA 2-4E1A Weight: 0.13 g (typ.