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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications Power Switching Applications
2SA1297
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −20 V
Collector-emitter voltage
VCEO −20 V
Emitter-base voltage
VEBO −6 V
Collector current
IC −2 A
Base current
IB −0.5 A
Collector power dissipation Junction temperature Storage temperature range
PC 400 mW
Tj 150 °C
Tstg
−55 to 150
°C
MINI
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-4E1A
temperature, etc.
2SA1297 Datasheet
