2SA1297
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Power Amplifier Applications Power Switching Applications
Unit: mm
- Low saturation voltage: VCE (sat) =
- 0.5 V (max) @IC =
- 2 A
- plementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 20 V
Collector-emitter voltage
VCEO
- 20 V
Emitter-base voltage
VEBO
- 6 V
Collector current
- 2 A
Base current
- 0.5 A
Collector power dissipation Junction temperature Storage temperature range
PC 400 m W
Tj 150 °C
Tstg
- 55 to 150
°C
MINI
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
― temperature/current/voltage and the significant change...
