2SA1297 Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Power Switching Applications 2SA1297 Unit: mm Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A plementary to 2SC3267.
| Part number | 2SA1297 |
|---|---|
| Datasheet | 2SA1297_ToshibaSemiconductor.pdf |
| File Size | 210.96 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Epitaxial Type Transistor |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Power Switching Applications 2SA1297 Unit: mm Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A plementary to 2SC3267.
| Part Number | Description |
|---|---|
| 2SA1293 | TRANSISTOR |
| 2SA1296 | Silicon PNP Epitaxial Type Transistor |
| 2SA1298 | Silicon PNP Transistor |
| 2SA1200 | SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
| 2SA1201 | Silicon PNP Transistor |
| 2SA1202 | Silicon PNP Transistor |
| 2SA1203 | Silicon PNP Transistor |
| 2SA1213 | Silicon PNP Transistor |
| 2SA1225 | Silicon PNP Transistor |
| 2SA1241 | Silicon PNP Transistor |