2SA1316 Datasheet | Toshiba

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Remended for the First Stages of MC Head Amplifiers Unit: mm - Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 n V/Hz1/2 (typ.) - Low pulse noise. Low 1/f noise - Low base spreading resistance: rbb’ = 2.0 Ω (typ.) - plementary to 2SC3329 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -80 -80 -5 -100 -20 400 125 -55~125 Electrical Characteristics (Ta = 25°C) Unit V V V m A m A m W °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Base spreading resistance Transition frequency Collector output capacitance Noise figure ICBO IEBO V (BR) CEO VCB = -80 V, IE = 0 VEB = -5 V, IC = 0 IC = -1 m A, IB = 0 h FE VCE = -6 V, IC = -2 m A (Note) VCE (sat) VBE rbb’ IC = -10 m A, IB = -1 m A VCE = -6 V, IC = -2 m A VCE = -6 V, IC = -1 m A, f = 100 MHz f T VCE = -6 V, IC = -1 m A, f = 100 MHz Cob VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -0.1 m A f = 10 Hz, RG = 10 k W VCE = -6 V, IC = -0.1 m A NF f = 1 k Hz, RG = 10 k W VCE = -6 V, IC = -0.1 m A f = 1 k Hz, RG = 100 W Note: h FE classification GR: 200~400, BL:...