2SA1320 Datasheet | Toshiba

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications Color TV Chroma Output Applications - - - High voltage: VCEO = - 250 V Low Cre: 1.8 p F (max) plementary to 2SC3333 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating - 250 - 250 - 5 - 50 - 100 - 20 0.6 150 - 55~150 Unit V V V m A m A W °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Reverse transfer capacitance Symbol ICBO IEBO V (BR) CEO h FE VCE (sat) VBE f T Cre Test Condition VCB = - 200 V, IE = 0 VEB = - 5 V, IC = 0 IC = - 1 m A, IB = 0 VCE = - 20 V, IC = - 25 m A IC = - 10 m A, IB = - 1 m A VCE = - 20 V, IC = - 25 m A VCE = - 10 V, IC = - 10 m A VCB = - 30 V, IE = 0, f = 1 MHz Min ⎯ ⎯ - 250 50 ⎯ ⎯ 60 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ - 0.75 80 ⎯ Max - 0.1 - 0.1 ⎯ ⎯ - 1.5 ⎯ ⎯ 1.8 V V MHz p F Unit μA μA V 2007-11-01 2007-11-01 2007-11-01...