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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1362
Low Frequency Power Amplifier Applications Power Switching Applications
2SA1362
Unit: mm
• High DC current gain: hFE = 120 to 400 • Low saturation voltage: VCE (sat) = −0.2 V (max)
(IC = −400 mA, IB = −8 mA) • Suitable for driver stage of small motor
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −15 V
Collector-emitter voltage
VCEO −15 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−800
mA
Base current
IB
−160
mA
JEDEC
TO-236MOD
Collector power dissipation
PC
200 mW
JEITA
SC-59
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.
2SA1362 Datasheet
