The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SA1621
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1621
Audio Power Amplifier Applications
• High hFE: hFE = 100 to 320 • Complementary to 2SC4210
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−35
V
−30
V
−5
V
−800
mA
−160
mA
200
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
2SA1621 Datasheet
